Dual metal gate self-aligned integration

ABSTRACT

A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.

FIELD OF THE INVENTION

The present invention relates to a semiconductor structure, and moreparticularly to a semiconductor structure including at least one n-typefield effect transistor (nFET) and at least one p-type field effecttransistor (pFET) that both include a metal gate, without including anupper polysilicon gate electrode. The present invention also provides amethod of fabricating such a semiconductor structure.

BACKGROUND OF THE INVENTION

In standard complementary metal oxide semiconductor (CMOS) devices,polysilicon is typically the standard gate material. The technology offabricating CMOS devices using polysilicon gates has been in a constantstate of development, and is now widely used in the semiconductorindustry. One advantage of using polysilicon gates is that they cansustain high temperatures. However, there are also some problemsassociated with using a polysilicon gate. For example, due to thepoly-depletion effect and relative high electrical sheet resistance,polysilicon gates commonly used in CMOS devices are becoming a gatingfactor in chip performance for channel lengths of 0.1 micron and below.Another problem with polysilicon gates is that the dopant in thepolysilicon gate, such as boron, can easily diffuse through the thingate dielectric causing further degradation of the device performance.

Another problem with polysilicon gates which include a dielectricmaterial having a dielectric constant that is greater than that ofsilicon dioxide is that during inversion the polysilicon gate undergoesa threshold voltage or flatband shift that shifts those values fromideal values to non-ideal values.

In order to avoid the problems with polysilicon gates, it has beensuggested to form a single metal beneath the polysilicon gate. That is,in current processing a thin metal layer for both the pFET and the nFETdevice is formed beneath a polysilicon gate electrode. During deviceprocessing, which includes thermal techniques above 1000° C.,polysilicon appears to interact with the thin metal changing theworkfunction and therefore the threshold voltages of the devices. Inparticular, hydrogen from the silane as well as silicon may diffuse intothe metal layer forming hydrides or silicides which have a mid-gapworkfunction. For example, during high temperature annealing, apolysilicon/metal gate stack becomes mid-gap rather than a solution fora pFET or an nFET.

In view of the above, there is a continued need for providing asemiconductor structure in which the nFETs are engineered to include ametal gate which maintains n-type behavior, while the pFETs areengineered to include a metal gate which maintains p-type behavior.

SUMMARY OF THE INVENTION

A semiconductor structure including at least one n-type field effecttransistor (nFET) and at least one p-type field effect transistor (pFET)that both include a metal gate, without including an upper polysilicongate electrode is provided. More particularly, the present inventionprovides a semiconductor structure in which the nFETs are engineered toinclude a metal gate which maintains n-type behavior (i.e., an n-typeworkfunction), while the pFETs are engineered to include a metal gatewhich maintains p-type behavior (i.e., a p-type workfunction).

In one embodiment of the present invention, the above is achieved byproviding a single metal layer, without an overlying Si-containing gateelectrode, as the gate in both the nFET device and the pFET device. Inorder to maintain nFET behavior, a rare earth metal (or rare earth-likemetal)-containing layer is present below the single metal layer in thenFET device region. In both device regions, a dielectric material havinga dielectric constant of greater than that of silicon dioxide is presentbeneath the single metal gate.

In another embodiment of the present invention, the above is achieved byforming a patterned gate region including a metal nitride layer withinboth device regions. The patterned gate region within the pFET deviceregion is then selectively oxidized forming a M′O_(a)N_(b) layer in thepFET device region. In the latter formula, M′ is a metal from Group IVB,VB, VIB or VIIB of the Periodic Table of Elements, a is from about 5 toabout 40 atomic percent and b is from about 5 to about 40 atomicpercent.

In general terms, the present invention provides a semiconductorstructure that comprises:

-   a semiconductor substrate comprising at least one nFET device region    and at least one pFET device region, which are separated by an    isolation region;-   a first metal gate stack within said at least one nFET device    region, said first metal gate stack having nFET behavior and    comprising a rare earth metal-containing layer and a first metal    layer; and-   a second metal gate stack within said at least one pFET device    region, said second metal gate stack having pFET behavior and    comprising a second metal layer that may be the same or different    from the first metal layer, wherein said first metal layer and said    second metal layer do not include a Si-containing gate electrode    thereon.

In addition to providing a semiconductor structure, the presentinvention provides a method for fabricating the inventive semiconductorstructure. In general terms, the method of the present inventioncomprises:

-   providing a semiconductor substrate comprising at least one nFET    device region and at least one pFET device region, which are    separated by an isolation region;-   forming a first metal gate stack within said at least one nFET    device region, said first metal gate stack having nFET behavior and    comprising a rare earth metal-containing layer and a first metal    layer; and-   forming a second metal gate stack within said at least one pFET    device region, said second metal gate stack having pFET behavior and    comprising a second metal layer that may be the same or different    from the first metal layer, wherein said first metal layer and said    second metal layer do not include a Si-containing gate electrode    thereon.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1F are pictorial representations (through cross sectionalviews) depicting one embodiment of the present invention for fabricatingthe inventive structure.

FIGS. 2A-2C are pictorial representations (through cross sectionalviews) depicting another embodiment of the present invention forfabricating the inventive structure.

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides a semiconductor structure and amethod of fabricating the same, will now be described in greater detailby referring to the drawings that accompany the present application. Itis noted that the drawings of the present application are provided forillustrative purposes and, as such, they are not drawn to scale. It isalso noted that in the drawings, like and/or corresponding elements arereferred to by like reference numerals.

It is further observed that the drawings of the present application showa fragment of a semiconductor substrate including a single nFET deviceregion and a single pFET device region. Although such an embodiment isspecifically shown and described, the present invention is not limitedto a single region for the pFET devices and the nFET devices, butinstead contemplates a plurality of each of such device regions locatedthroughout the remaining portions of the substrate. Also, more that onenFET device and pFET device can be formed in the corresponding deviceregion.

Reference is first made to FIGS. 1A-1F which illustrate the basicprocessing flow utilized in a first embodiment of the present invention.In the first embodiment of the present invention, a single metal layer,without an overlying Si-containing gate electrode, is used as the gatein both the nFET device and the pFET device. In order to maintain nFETbehavior, a rare earth metal (or rare earth-like)-containing layer ispresent below the single metal layer in the nFET device region. In bothcases, a dielectric material having a dielectric constant of greaterthan that of silicon dioxide is present beneath the single metal gate.

FIG. 1A shows an initial structure that is used in this embodiment ofthe present invention. The initial structure shown in FIG. 1A includes asemiconductor substrate 10 comprising at least one nFET device region 12(i.e., an area of the substrate 10 in which nFETs will be subsequentlyformed) and at least one pFET device region 14 (i.e., an area of thesubstrate 10 in which pFETs will be subsequently formed). In accordancewith the present invention, the at least one nFET device region 12 isseparated (in the lateral direction) by an isolation region 16. Theinitial structure also shows the presence of a p-well region 11 withinthe at least one nFET device region 12, and an n-well region 13 withinthe at least one pFET device region 14. The well regions 11 and 13,respectively, are optional and need not be present in all instances.FIG. 1A also shows the presence of an optional interfacial layer 18, anda dielectric material 20 having a dielectric constant of greater thanthat of silicon dioxide present on the substrate in both device regions.A rare earth metal (or a rare earth-like) containing layer 22 is presenton the dielectric material 20 within the nFET device region 12.

The semiconductor substrate 10 of the initial structure shown in FIG. 1Acomprises any semiconducting material including, but not limited to: Si,Ge, SiGe, SiC, SiGeC, GaAs, GaN, INAs, InP and all other III/V or II/VIcompound semiconductors. Semiconductor substrate 10 may also comprise anorganic semiconductor or a layered semiconductor such as Si/SiGe, or asemiconductor-on-insulator (SOI). In some embodiments of the presentinvention, it is preferred that the semiconductor substrate 10 becomposed of a Si-containing semiconductor material, i.e., asemiconductor material that includes silicon. The semiconductorsubstrate 10 may be doped, undoped or contain doped and undoped regionstherein. The semiconductor substrate 10 may include a single crystalorientation or it may include at least two coplanar surface regions thathave different crystal orientations (the latter substrate is referred toin the art as a hybrid substrate). When a hybrid substrate is employed,an nFET is typically formed on a (100) crystal surface, while a pFET istypically formed on a (110) crystal plane. The hybrid substrate can beformed by techniques such as described, for example, in U.S. Ser. No.10/250,241, filed Jun. 17, 2003, now U.S. Publication No. 20040256700A1,U.S. Ser. No. 10/725,850, filed Dec. 2, 2003, and U.S. Ser. No.10/696,634, filed Oct. 29, 2003, the entire contents of each areincorporated herein by reference.

The well regions 11 and 13 are doped regions that are formed into thesemiconductor substrate 10 utilizing conventional ion implantationprocesses. It is again noted that the well regions are optional and neednot be present in all instances.

At least one isolation region 16 is then typically formed into thesemiconductor substrate 10. The isolation region 16 may be a trenchisolation region or a field oxide isolation region. The trench isolationregion is formed utilizing a conventional trench isolation process wellknown to those skilled in the art. For example, lithography, etching andfilling of the trench with a trench dielectric may be used in formingthe trench isolation region. Optionally, a liner may be formed in thetrench prior to trench fill, a densification step may be performed afterthe trench fill and a planarization process may follow the trench fillas well. The depth of the trench used in forming the trench isolationregion may vary and is not critical to the present invention. The fieldoxide may be formed utilizing a so-called local oxidation of siliconprocess. Note that the at least one isolation region 16 providesisolation between neighboring gate regions, typically required when theneighboring gates have opposite conductivities, i.e., nFETs and pFETs.The neighboring gate regions can have the same conductivity (i.e., bothn- or p-type), or alternatively they can have different conductivities(i.e., one n-type and the other p-type). The later case is shown in thedrawings of the present application.

After processing the semiconductor substrate 10, an interfacial layer 18is optionally formed on the surface of the semiconductor substrate 10 bychemical oxidation. The optional interfacial layer 18 is formedutilizing a conventional wet chemical process technique that is wellknown to those skilled in the art. Alternatively, the interfacial layer18 may be formed by thermal oxidation or oxynitridation. When thesubstrate 10 is a Si-containing semiconductor, the interfacial layer 18is comprised of chemical oxide grown by wet processing, or thermallygrown silicon oxide, silicon oxynitride or a nitrided silicon oxide.When the substrate 10 is other than a Si-containing semiconductor, theinterfacial layer 18 may comprise a semiconducting oxide, asemiconducting oxynitride or a nitrided semiconducting oxide.

The thickness of the interfacial layer 18 is typically from about 0.5 toabout 1.2 nm, with a thickness from about 0.8 to about 1 nm being moretypical. The thickness, however, may be different after processing athigher temperatures, which are usually required during CMOS fabrication.

In accordance with an embodiment of the present invention, theinterfacial layer 18 is a silicon oxide layer having a thickness fromabout 0.6 to about 0.8 nm that is formed by wet chemical oxidation. Theprocess step for this wet chemical oxidation includes treating a cleanedsemiconductor surface (such as a HF-last semiconductor surface) with amixture of ammonium hydroxide, hydrogen peroxide and water (in a 1:1:5ratio) at 65° C. Alternatively, the interfacial layer 18 can also beformed by treating the HF-last semiconductor surface in ozonated aqueoussolutions, with the ozone concentration usually varying from, but notlimited to: 2 parts per million (ppm) to 40 ppm.

Next, the dielectric material 20 is formed on the surface of theinterfacial layer 18, if present, or the surface of the semiconductorsubstrate 10 by a deposition process such as, for example, chemicalvapor deposition (CVD), plasma-assisted CVD, physical vapor deposition(PVD), metalorganic chemical vapor deposition (MOCVD), atomic layerdeposition (ALD), evaporation, reactive sputtering, chemical solutiondeposition and other like deposition processes. Combinations of theseprocesses are also contemplated herein. It is noted that in this step ofthe present invention, the dielectric material 20 is formed in both thedevice regions.

The dielectric material 20 employed in the present invention is anydielectric material having a dielectric constant of greater than about4.0, typically greater than about 7.0. Note that silicon dioxide has adielectric constant of 4.0 and, as such, the present inventioncontemplates any dielectric whose dielectric constant is greater thanthat of silicon dioxide. The dielectric material 20 is typically a metaloxide or mixed metal oxide. Illustrative examples of such dielectricsinclude, but are not limited: TiO₂, Al₂O₃, LaO₂, SrTiO₃, LaAlO₃, ZrO₂,Y₂O₃, Gd₂O₃, Hf-based dielectrics (to be described in greater detailherein below), and combinations including multilayers thereof.Preferably, the dielectric material 20 is a Hf-based dielectric.

The term ‘Hf-based dielectric’ is intended herein to include any high kdielectric containing hafnium, Hf. Examples of such Hf-based dielectricscomprise hafnium oxide (HfO₂), hafnium silicate (HfSiO_(x)), Hf siliconoxynitride (HfSiON) or multilayers thereof. In some embodiments, theHf-based dielectric comprises a mixture of HfO₂ and ZrO₂ or rare earthoxide such as La₂O₃. Typically, the Hf-based dielectric is hafnium oxideor hafnium silicate. Hf-based dielectrics typically have a dielectricconstant that is greater than about 10.0.

The physical thickness of the dielectric material 20 may vary, buttypically, the dielectric material 20 has a thickness from about 0.5 toabout 10 nm, with a thickness from about 1 to about 3 nm being moretypical.

In one embodiment of the present invention, the dielectric material 20is hafnium oxide that is formed by MOCVD were a flow rate of about 70 toabout 90 mgm of hafnium-tetrabutoxide (a Hf-precursor) and a flow rateof O₂ of about 250 to about 350 sccm are used. The deposition of Hfoxide occurs using a chamber pressure between 0.3 and 0.5 Torr and asubstrate temperature of between 400° and 500° C.

In another embodiment of the present invention, the dielectric material20 is hafnium silicate which is formed by MOCVD using the followingconditions (i) a flow rate of the precursor Hf-tetrabutoxide of between70 and 90 mg/m, a flow rate of O₂ between 25 and 100 sccm, and a flowrate of SiH₄ of between 20 and 60 sccm; (ii) a chamber pressure between0.3 and 0.5 Torr, and (iii) a substrate temperature between 400° and500° C.

After forming the dielectric material 20, a rare earth metal-containinglayer 22 is then formed on the dielectric material 20 in both deviceregions. The rare earth metal-containing layer 22 comprises an oxide ornitride of at least one element from Group IIIB of the Periodic Table ofElements including, for example, La, Ce, Pr, Nd, Pm, Sm, Eu, Ga, Th, Dy,Ho, Er, Tm, Yb, Lu or mixtures thereof. Preferably, the rare earthmetal-containing layer 22 comprises an oxide of La, Ce, Y, Sm, Er,and/or Th, with La₂O₃ or LaN being most preferred.

The rare earth metal-containing layer 22 is formed utilizing aconventional deposition process including, for example, evaporation,molecular beam deposition, MOCVD, ALD, PVP and other like depositionprocesses. In one embodiment of the present invention, the rare earthmetal-containing layer 22 is formed by placing the structure includingthe blanket deposited dielectric material 20 into the load-lock of amolecular beam deposition chamber, followed by pumping this chamber downto the range of 10⁻⁵ to 10⁻⁸ Torr. After these steps, the structure isinserted, without breaking vacuum into the growth chamber where the rareearth metal-containing layer 22 such as La oxide is deposited bydirecting atomic/molecular beams of the rare earth metal and oxygen ornitrogen onto the structure's surface. Specifically, because of the lowpressure of the chamber, the released atomic/molecular species arebeamlike and are not scattered prior to arriving at the structure. Asubstrate temperature of about 300° C. is used. In the case of La₂O₃deposition, the La evaporation cell is held in the temperature range of1400° to 1700° C., and a flow rate of 1 to 3 sccm of molecular oxygen isused. Alternatively, atomic or excited oxygen may be used as well, andthis can be created by passing the oxygen through a radio frequencysource excited in the range of 50 to 600 Watts. During the deposition,the pressure within the chamber can be in the range from 1×10⁻⁵ to8×10⁻⁵ Torr, and the La oxide growth rate can be in the range from 0.1to 2 nm per minute, with a range from 0.5 to 1.5 nm being more typical.

The rare earth metal-containing layer 22 typically has a thickness fromabout 0.1 nm to about 3.0 nm, with a thickness from about 0.3 nm toabout 1.6 nm being more typical.

After forming a blanket layer of material 22, a patterned block mask(not shown) is formed on top of the rare earth metal-containing layer 22within the nFET device region 12 utilizing conventional processesincluding deposition and lithography that are well known in the art. Thepatterned block mask within the nFET device region 12 protects thematerial layers that are located in that region. Next, the exposed rareearth metal-containing layer 22 within the pFET device region 14 isselectively removed from that region utilizing an etching process thatis capable of removing that layer, while stopping on the underlyingdielectric material 20. One example of an etching process that can beused in selectively removing the exposed rare earth metal-containinglayer 22 from within the pFET device region 14 is a chemical etchingprocess. The patterned block mask is typically removed from within theat least one nFET region 12 at this point of the present invention byutilizing a conventional stripping process that is well known in theart.

After forming the structure shown in FIG. 1B, a material stack 24comprising from top to bottom a metal layer 26, a non-hydrogencontaining cap 28 and a Si-containing layer 30 is formed within bothdevice regions.

The metal layer 26 of the material stack 24 comprises a MO_(x)N_(y)compound metal wherein M includes at least one metal selected from GroupIVB, VB, VIB or VIIB of the Periodic Table of Elements (CAS version).Typically, M is one of Ti, V, Zr, Nb, Mo, Hf, W, Ta or Re, with Ti beingmost typical. In the above formula, x is from about 5 to about 40 atomicpercent, preferably from about 5 to about 35 atomic percent, with 25atomic percent being most preferred. The variable y is from about 5 toabout 40 atomic percent, preferably from about 15 to about 40 atomicpercent, with 35 atomic percent being most preferred. A most preferredcompound metal thus is Ti_(0.4)O_(0.25)N_(0.35).

The MO_(x)N_(y) compound metal is formed by first providing a metal (M)target and an atmosphere that comprises Ar, N₂ and oxygen—the oxygen ispresent within the atmosphere in a concentration that can introduce fromabout 5 to about 40 atomic percent oxygen into the final film. TheMO_(x)N_(y) film is sputtered from said metal target in said atmosphere.The sputtering process occurs in a reactor chamber of any conventionalsputtering apparatus. The metal target used in the present inventionincludes any solid source of one of the above-mentioned metals.

The oxygen can be introduced into the sputtering atmosphere utilizingone of the following two methods: (I) If the substrate and the targetare positioned closed to each in the reactor chamber, an oxygen leakvalve can be used to introduce oxygen into the atmosphere. (II) If thesubstrate and the target are separated by some distance (greater than3″), the oxygen can be introduced from the pre-sputtering backgroundpressure which can be from about 1×10−⁴ Torr or below. In this case, themetal target grabs the oxygen during the sputtering process.

The flow of Ar and N₂ employed in the present invention is from about 1to about 100 sccm for Ar and from about 1 to about 100 sccm for N₂source. More typically, the flow of Ar is about 20 sccm and the flow ofN₂ is about 1.4 sccm. The other sputtering conditions such astemperature, gas pressure and time are conventional and are well knownto those skilled in the art.

The thickness of the metal layer 26 formed may vary depending on thesputtering conditions used and the type of device to be fabricated.Typically, the metal layer 26 has a thickness, after sputtering, fromabout 2 to about 200 nm, with a thickness of about 100 nm or less beingeven more typical. It is noted that metal layer 26 is a gate metal thatis present within both the nFET device region 12 and the pFET deviceregion 14.

After forming the metal layer 26, the non-hydrogen containing cap 28 ofthe material stack 24 such as amorphous silicon or doped amorphoussilicon is formed. By “non-hydrogen” it is meant that the cap materialdoes not include hydrogen. It is noted that the presence of the cap 28prevent the metal oxynitride layer 26 from undergoing a workfunctionchange. The cap 28 is formed utilizing a conventional deposition processwell known in the art. The cap 28 is typically doped utilizing anin-situ deposition process or by deposition, ion implantation andannealing. The thickness, i.e., height, of the cap 28 formed at thispoint of the present invention may vary depending on the processemployed. Typically, the cap 28 has a vertical thickness from about 20to about 180 nm, with a thickness from about 40 to about 150 nm beingmore typical.

In some embodiments of the present invention, the cap 28 is replacedwith a metal nitride layer. The metal nitride layer includes a metalfrom Group IVB, VB, VIB or VIIB of the Periodic Table of Elements. Byway of example, TiN or TaN are particularly preferred materials. Themetal nitride layer is formed utilizing a conventional depositionprocess. Examples of conventional depositions that can be used informing the metal nitride layer include CVD, PVD, ALD, sputtering orevaporation. The physical thickness of the metal nitride layer may vary,but typically, the metal nitride layer has a thickness from about 0.5 toabout 200 nm, with a thickness from about 5 to about 100 nm being moretypical.

A Si-containing layer 30 such as epitaxial silicon, silicon dioxide, andthe like is then formed atop the non-hydrogen containing cap 28 (or themetal nitride layer). The Si-containing layer 30 is formed utilizing aconventional deposition process such as, for example, CVD, PECVD,evaporation and the like. The Si-containing layer 30, which serves as asilicon source for forming a subsequent silicide contact atop the FETs,typically has a thickness from about 10 to about 100 nm, with athickness from about 10 to about 30 nm being even more typical.

The material stack 24 is then patterned by lithography and etching so asto provide a patterned gate region or stack 32 within each of the deviceregions. Although a single patterned gate region (or stack) 32 is shownin each of the device regions, the present invention contemplatesforming a plurality of patterned gate regions (or stacks) 32. When aplurality of patterned gate regions (or stacks) 32 are formed, the gateregions (or stacks) may have the same dimension, i.e., length, or theycan have variable dimensions to improve device performance. Eachpatterned gate stack (or region) 32 at this point of the presentinvention includes at least a patterned material stack 24. FIG. 1C showsthe structure after pattern gate region (or stack) 32 formation. In theillustrated embodiment, the material stack 24 is etched, i.e.,patterned, during this step of the present invention.

The lithographic step includes applying a photoresist to the uppersurface of the blanket layered structure shown in FIG. 1B, exposing thephotoresist to a desired pattern of radiation and developing the exposedphotoresist utilizing a conventional resist developer. The pattern inthe photoresist is then transferred to the structure utilizing one ormore dry etching steps. In some embodiments, the patterned photoresistmay be removed after the pattern has been transferred into one of thelayers of the blanket layered structure. In other embodiments, thepatterned photoresist is removed after etching has been completed.

Suitable dry etching processes that can be used in the present inventionin forming the patterned gate region (or stack) 32 include, but are notlimited to: reactive ion etching, ion beam etching, plasma etching orlaser ablation. The dry etching process employed is typically, but notalways, selective to the underlying dielectrics therefore this etchingstep does not typically remove those dielectrics from the structure. Insome embodiments (not shown), this etching step may however be used toremove portions of the rare earth metal-containing layer 22, thedielectric material 20 and the interfacial layer 18 that are notprotected by the gate region (or stack) 32 that were previously etched.

At this point of the present invention, extension regions 34 aretypically formed utilizing a conventional ion implantation process wellknown to those skilled in the art. The extension regions 34 are shallow,relative to the diffusion regions to be subsequently formed, and aninner edge thereof is aligned to the vertical edge of the gate regions32. The structure including the extension regions 34 is also shown inFIG. 1C.

Next, and as is shown in FIG. 1D, at least one spacer 36 is typically,but not always, formed on exposed sidewalls of each patterned gateregion (or stack) 32. The at least one spacer 36 is comprised of aninsulator such as an oxide, nitride, oxynitride and/or any combinationthereof. The at least one spacer 36 is formed by deposition and etching.

The width of the at least one spacer 36 must be sufficiently wide suchthat the source and drain silicide contacts (to be subsequently formed)do not encroach underneath the edges of the gate region (or stack) 32.Typically, the source/drain silicide does not encroach underneath theedges of the gate region (or stack) 32 when the at least one spacer 36has a width, as measured at the bottom, from about 20 to about 80 nm.

The gate region (or stack) 32 can be optionally passivated prior tospacer formation by subjecting the same to a thermal oxidation,nitridation or oxynitridation process. Passivation should preferably beperformed utilizing a non-hydrogen process. The passivation step forms athin layer of passivating material (not shown) about the gate region (orstack) 32. This step may be used instead or in conjunction with theprevious step of spacer formation. When used with the spacer formationstep, spacer formation occurs after the gate region (or stack) 32passivation process. It is noted that both the passivation and spacerformation processes utilized in the present invention are performedutilizing non-hydrogen containing materials.

Source/drain diffusion regions 38 (with or without the spacers present)are then formed into the substrate. The source/drain diffusion regions38 are formed utilizing ion implantation and an annealing step. Theannealing step serves to activate the dopants that were implanted by theprevious implant step. The conditions for the ion implantation andannealing are well known to those skilled in the art. The structureformed after ion implantation and annealing is shown in FIG. 1E.

Halo implants (not shown) are also contemplated herein. As is shown, thesource/drain extensions 34 are typically shallower than the deepsource/drain regions 38 and they include an edge that is aligned with anedge of the patterned gate region (or stack) 20. The source/drainregions 38 include an edge that is typically aligned to the outermostedge of the at least one spacer 36.

Next, and if not previously removed, the exposed portion of the rareearth metal containing layer 22 is removed from within the nFET deviceregion 12. See FIG. 1F. The exposed portions of layer 22 within the nFETdevice region are removed utilizing an etching process that selectivelyremoves rare earth metal (or rare earth metal-like) materials. Anexample of such as etching process is a chemical wet etching process.

FIG. 1F also shows the structure after removing the exposed portions ofboth the dielectric material 20 and the interfacial layer 18 from bothdevice regions. In accordance with the present invention, thesematerials are removed utilizing a chemical etching process thatselectively removes these insulating materials. This etching step stopson an upper surface of the semiconductor substrate 10. Although anychemical etchant may be used in removing the exposed portions of thehigh k dielectric 14 and the underlying interfacial layer 12, in oneembodiment dilute hydrofluoric acid (DHF) is used.

FIG. 1F further shows the presence of silicide regions 40 atop thesource/drain diffusion regions 38 and the cap 28 (note that layer 30gets consumed during the silicide process). The silicide regions 40 areformed utilizing any conventional silicidation process. In someembodiments and when no Si-containing material is present on at leastthe source/drain regions 38, a Si-containing material, such as epitaxialSi can be formed prior to silicidation.

The silicidation process comprises forming a conductive and refractorymetal such as Co, Ti, W, Ni, Pt or alloys thereof with other alloyingadditives, such as C, Ge, Si, and etc., on top of the area to besilicided. A conventional deposition process, such as CVD, PECVD,sputtering, evaporation or plating, can be used. Optionally, a barrierlayer may be formed over the metal layer that protects the metal fromoxidation. Examples of optional barrier layers include, for example,SiN, TiN, TaN, TiON and combinations thereof. Following metal depositionthe structure is subjected to at least a first anneal that causesreaction between the deposited metal and Si and subsequent formation ofa metal silicide. The annealing is typically performed at a temperaturefrom about 250° to about 800° C., with a first annealing temperaturefrom about 400° to about 550° C. being more typical.

In some embodiments, the first anneal forms a metal rich silicide phase,which is highly resistant to a selective etch process. When a metal richphase is produced, a second higher temperature anneal is required toform a low resistivity silicide. In other embodiments, the first annealis sufficient in forming the low resistivity silicide.

Following the first anneal, the unreacted and remaining portions of thedeposited metal are removed using a conventional etch process, such aswet etching, reactive-ion etching (RIE), ion beam etching, or plasmaetching.

If needed, a second anneal is performed after the etching process. Thesecond annealing is typically performed at higher temperatures than thefirst annealing. A typical temperature range for the second, optional,anneal is from about 550° to about 900° C.

Further CMOS processing such as the formation of BEOL(back-end-of-the-line) interconnect levels with metal interconnects canbe formed utilizing processing steps that are well known to thoseskilled in the art.

Reference is now made to FIGS. 2A-2C which are cross sectional viewsdepicting another embodiment of the present invention for fabricatingthe inventive structure. In this embodiment of the present invention,the material stack 24 described above is not employed. Instead, a metalnitride layer is formed within both device regions, patterned, and thena patterned block mask is formed within the nFET device region 12. Thepatterned gate region within the pFET device region 14 is then oxidizedforming a M′O_(a)N_(b) layer in the pFET device region 14. The blockmask is removed, extension regions are formed and the processing asdescribed in FIGS. 1D-1F is performed. Specifically, the secondembodiment begins by providing the structure shown in FIG. 2A. It isnoted that the structure shown in FIG. 2A is essentially the same asshown in FIG. 1A. Thus, the above materials and processing used informing FIG. 1A structure are also applicable here for FIG. 2Astructure.

FIG. 2B shows the structure of FIG. 2A after forming a metal nitridelayer 70 thereon. Metal nitride layer 70 includes a metal from GroupIVB, VB, VIB or VIIB of the Periodic Table of Elements. Hence, the metalnitride layer 70 may include Ti, Zr, Hf, V, Nb, W or Ta, with Ti or Tabeing highly preferred. By way of example, TiN or TaN are particularlypreferred materials. The metal nitride layer 70 is formed utilizing aconventional deposition process. Examples of conventional depositionsthat can be used in forming the metal nitride layer 70 include CVD, PVD,ALD, sputtering or evaporation.

The physical thickness of the metal nitride layer 70 may vary, buttypically, the metal nitride layer 70 has a thickness from about 0.5 toabout 200 nm, with a thickness from about 5 to about 100 nm being moretypical.

In one embodiment of the present invention, the metal nitride layer 70is TiN that is deposited by evaporating Ti from an effusion cell held inthe range of 1550° to 1900° C., typically 1600° to 1750° C., and usingan atomic/excited beam of nitrogen that is passed through a remote radiofrequency source. The substrate temperature can be around 300° C. andthe nitrogen flow rate can be between 0.5 sccm and 3.0 sccm. Theseranges are exemplary and by no way limit the present invention. Thenitrogen flow rate depends upon the specifics of the deposition chamber,in particularly, the pumping rate on the chamber. The TiN may bedeposited, in other ways, as well, such as chemical vapor deposition orsputtering and the technique is not critical.

After forming the metal nitride layer 70 within both device regions, thestructure shown in FIG. 2B is patterned by lithography and etchingproviding a gate stack including a patterned metal nitride layer 70within each of the device regions. A block mask 72 comprising aconventional material is then formed within the nFET device region 12 soas to protect the materials layers within the nFET device region 12. Theblock mask 72 is formed by deposition and lithography. Etching mayoptionally be used in forming the block mask 72. FIG. 2C shows thestructure in which block mask 72 is present within the nFET deviceregion 12. Next, and as also shown in FIG. 2C, the exposed patternedmetal nitride layer 70 within the pFET device region 14 is subjected toan oxidation process which introduces oxygen within the patternednitride layer forming a M′O_(a)N_(b) layer 70′ in the pFET device region14, wherein M′ is a metal from Group IVB, VB, VIB or VIIB of thePeriodic Table of Elements, a is from about 5 to about 40 atomic percentand b is from about 5 to about 40 atomic percent. Preferably, M′ is oneof Ti, Zr, Hf, V, Nb, W or Ta, with Ti or Ta, with Ti or Ta being morehighly preferred. Preferably, a is from about 5 to about 35 atomicpercent and b is from about 15 to about 40 atomic percent. Morepreferably, a is 25 atomic percent and b is 35 atomic percent.

The oxidation used at this point of the present invention is performedin any oxygen-containing ambient such as, for example, O₂, ozone or NO,that is admixed with an inert gas such as, for example, He, Ar, N₂ andthe like. The oxidation is performed at a temperature from about 300° toabout 800° C.

The oxygen can also be introduced by selectively implanting oxygen atomsin the metal nitride layer within the pFET device region 14 and thensubjecting the same to an annealing step that is performed at atemperature from about 300° to about 800° C. The concentration of oxygenions being implant is sufficient to provide the above-mentioned valuesfrom a and b. Gas phase doping may also be used to introduce oxygen withthe gate stack of the pFET device region 14.

The patterned block mask 72 is removed from within the nFET deviceregion 12 utilizing a conventional stripping process.

After forming extension regions (not shown) within the substrate 10, theprocedure as outlined above in FIGS. 1D-1F is then performed inproviding a final structure in accordance with the present invention.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1. A semiconductor structure comprising: a semiconductor substratecomprising at least one nFET device region and at least one pFET deviceregion, which are separated by an isolation region; a first metal gatestack within said at least one nFET device region, said first metal gatestack having nFET behavior and comprising a rare earth metal-containinglayer and a first metal layer; and a second metal gate stack within saidat least one pFET device region, said second metal gate stack havingpFET behavior and comprising a second metal layer that may be the sameor different from the first metal layer, wherein said first metal layerand said second metal layer do not include a Si-containing gateelectrode thereon.
 2. The semiconductor structure of claim 1 whereinsaid semiconductor substrate is a bulk semiconductor.
 3. Thesemiconductor structure of claim 1 wherein said semiconductor substrateis a semiconductor-on-insulator.
 4. The semiconductor structure of claim1 wherein said rare earth metal-containing layer comprises an oxide or anitride of at least one element from Group IIIB of the Periodic Table ofElements.
 5. The semiconductor structure of claim 4 wherein said rareearth metal-containing layer comprises an oxide of at least one of La,Ce, Y, Sm, Er or Th.
 6. The semiconductor structure of claim 1 whereinsaid first metal layer and the second metal layer are the same andcomprise a MO_(x)N_(y) compound metal wherein M includes at least onemetal selected from Group IVB, VB, VIB or VIIB of the Periodic Table ofElements, x is from about 5 to about 40 atomic percent and y is fromabout 5 to about 40 atomic percent.
 7. The semiconductor structure ofclaim 6 wherein M is Ti and x is 25 atomic percent and y is 35 atomicpercent.
 8. The semiconductor structure of claim 1 wherein said firstmetal layer and the second metal layer are different, said first metallayer comprising a metal nitride including a metal from Group IVB, VB,VIB or VIIB of the Periodic Table of Elements, and said second metallayer comprising a M′O_(a)N_(b), wherein M′ is a metal from Group IVB,VB, VIB or VIIB of the Periodic Table of Elements, a is from about 5 toabout 40 atomic percent and b is from about 5 to about 40 atomicpercent.
 9. The semiconductor structure of claim 1 further comprising adielectric material located beneath said first and second gate stacks,said dielectric material has a dielectric constant that is greater thanthat of silicon dioxide.
 10. The semiconductor structure of claim 9wherein said dielectric material comprises a Hf-based dielectric.
 11. Amethod of fabricating a semiconductor structure comprising: providing asemiconductor substrate comprising at least one nFET device region andat least one pFET device region, which are separated by an isolationregion; forming a first metal gate stack within said at least one nFETdevice region, said first metal gate stack having nFET behavior andcomprising a rare earth metal-containing layer and a first metal layer;and forming a second metal gate stack within said at least one pFETdevice region, said second metal gate stack having pFET behavior andcomprising a second metal layer that may be the same or different fromthe first metal layer, wherein said first metal layer and said secondmetal layer do not include a Si-containing gate electrode thereon. 12.The method of claim 11 wherein said first metal layer and the secondmetal layer are the same and comprise a MO_(x)N_(y) compound metalwherein M includes at least one metal selected from Group IVB, VB, VIBor VIIB of the Periodic Table of Elements, x is from about 5 to about 40atomic percent and y is from about 5 to about 40 atomic percent.
 13. Themethod of claim 12 wherein said compound metal is formed by sputteringusing a metal target and an atmosphere comprising Ar, N₂ and oxygen. 14.The method of claim 13 wherein said oxygen is from a pre-sputteringbackground pressure.
 15. The method of claim 12 wherein said rare earthmetal-containing layer comprises an oxide or a nitride of at least oneelement from Group IIIB of the Periodic Table of Elements that is formedby deposition.
 16. The method of claim 12 wherein said first metal layerand the second metal layer are different, said first metal layercomprising a metal nitride including a metal from Group IVB, VB, VIB orVIIB of the Periodic Table of Elements, and said second metal layercomprising a M′O_(a)N_(b), wherein M′ is a metal from Group IVB, VB, VIBor VIIB of the Periodic Table of Elements, a is from about 5 to about 40atomic percent and b is from about 5 to about 40 atomic percent.
 17. Themethod of claim 16 wherein said M′O_(a)N_(b) material is formedintroducing oxygen into a metal nitride layer.
 18. The method of claim17 wherein said oxygen is introduced by oxidation, or by ionimplantation and annealing, or by gas phase doping.
 19. The method ofclaim 12 further comprising forming a dielectric material beneath saidfirst and second gate stacks, said dielectric material has a dielectricconstant that is greater than that of silicon dioxide.
 20. The method ofclaim 19 wherein said dielectric material comprises a Hf-baseddielectric.